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多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究
陈晔; 张旺; 李国华; 朱作明; 韩和相; 汪兆平; 周伟; 王占国
2000
Source Publication红外与毫米波学报
Volume19Issue:1Pages:19
Abstract测量了自组织多层In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的变温光致发光谱,同时观察到来自浸润层和量子点的发光,首次直接观察了浸润层和量子点之间的载流子热转移。分析发光强度随温度的变化发现浸润发光的热淬灭包括两个过程
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金,国家攀登计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:641266
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18363
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈晔,张旺,李国华,等. 多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究[J]. 红外与毫米波学报,2000,19(1):19.
APA 陈晔.,张旺.,李国华.,朱作明.,韩和相.,...&王占国.(2000).多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究.红外与毫米波学报,19(1),19.
MLA 陈晔,et al."多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究".红外与毫米波学报 19.1(2000):19.
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