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低温GaAs外延层上生长InAs量子点的研究
王晓东; 汪辉; 王海龙; 牛智川; 封松林
2000
Source Publication红外与毫米波学报
Volume19Issue:3Pages:177
Abstract利用退火技术,实现了在低温GaAs外延层上InAs量子点的生长。透射电镜(TEM)研究表明,低温GaAs外延层上生长的InAs量子点比通常生长的InAs量子点明显变小,且密度变大,认为是由于低温GaAs中的点缺陷以及As沉淀引起的
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金,国家攀登计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:641300
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18361
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓东,汪辉,王海龙,等. 低温GaAs外延层上生长InAs量子点的研究[J]. 红外与毫米波学报,2000,19(3):177.
APA 王晓东,汪辉,王海龙,牛智川,&封松林.(2000).低温GaAs外延层上生长InAs量子点的研究.红外与毫米波学报,19(3),177.
MLA 王晓东,et al."低温GaAs外延层上生长InAs量子点的研究".红外与毫米波学报 19.3(2000):177.
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