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InGaAs/GaAs自组织量子点光致发光特性研究
牛智川; 王晓东; 苗振华; 封松林
2001
Source Publication红外与毫米波学报
Volume20Issue:1Pages:20
Abstract用PL谱测试研究了GaAs和不同In组份In_xGa_(1-x)As(x=0.1,0.2,0.3)覆盖层对分子束外延生长的InAs/GaAs自组织量子点发光特性的影响。用In_xGa_(1-x)As外延层覆盖InAs/GaAs量子点,比用GaAs做覆盖层其发光峰能量向低能端移动,发光峰半高宽变窄,量子点发光峰能量随温度的红移幅度变小。理论计算证实这是由于覆盖层In_xGa_(1-x)As减小了InAs表面应力导致发光峰红移,而In元素有效抑制了InAs/GaAs界面组份的混杂,量子点的均匀性得到改善,PL谱谱半高宽变窄。用InGaAs覆盖的In_(0.5)Ga_(0.5)As/GaAs自组织量子点实现了1.3μm发光,室温下PL谱半高宽为19.2meV,是目前最好的实验结果。
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金,国家攀登计划,教育部留学回国人员基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:641370
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18349
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
牛智川,王晓东,苗振华,等. InGaAs/GaAs自组织量子点光致发光特性研究[J]. 红外与毫米波学报,2001,20(1):20.
APA 牛智川,王晓东,苗振华,&封松林.(2001).InGaAs/GaAs自组织量子点光致发光特性研究.红外与毫米波学报,20(1),20.
MLA 牛智川,et al."InGaAs/GaAs自组织量子点光致发光特性研究".红外与毫米波学报 20.1(2001):20.
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