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InGaAs/InAlAs量子级联激光器研究
张权生; 刘峰奇; 张永照; 王占国; Gao Honghai; A.Krier
2001
Source Publication红外与毫米波学报
Volume20Issue:1Pages:41
Abstract简要报道了自行研制的InGaAs/InAlAs量子级联激光器的制备及其主要特性。该器件具有增强型脊型波导结构,在80K时阈值电流为0.5A,相应的阈值电流密度为5KA/cm~2。
metadata_83中科院半导体所;Lancaster University
Subject Area半导体材料
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:641375
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18345
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张权生,刘峰奇,张永照,等. InGaAs/InAlAs量子级联激光器研究[J]. 红外与毫米波学报,2001,20(1):41.
APA 张权生,刘峰奇,张永照,王占国,Gao Honghai,&A.Krier.(2001).InGaAs/InAlAs量子级联激光器研究.红外与毫米波学报,20(1),41.
MLA 张权生,et al."InGaAs/InAlAs量子级联激光器研究".红外与毫米波学报 20.1(2001):41.
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