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生长在(311)A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究
陈晔; 李国华; 朱作明; 韩和相; 汪兆平; 周伟; 王占国
2001
Source Publication红外与毫米波学报
Volume20Issue:1Pages:53
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:641379
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18343
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈晔,李国华,朱作明,等. 生长在(311)A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究[J]. 红外与毫米波学报,2001,20(1):53.
APA 陈晔.,李国华.,朱作明.,韩和相.,汪兆平.,...&王占国.(2001).生长在(311)A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究.红外与毫米波学报,20(1),53.
MLA 陈晔,et al."生长在(311)A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究".红外与毫米波学报 20.1(2001):53.
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