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Si(001)衬底上APCVD生长3C-SiC薄膜的微孪晶及含量
郑新和; 渠波; 王玉田; 戴自忠; 杨辉; 梁骏吾
2001
Source Publication中国科学. A辑,数学
Volume31Issue:3Pages:242
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:652821
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18329
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑新和,渠波,王玉田,等. Si(001)衬底上APCVD生长3C-SiC薄膜的微孪晶及含量[J]. 中国科学. A辑,数学,2001,31(3):242.
APA 郑新和,渠波,王玉田,戴自忠,杨辉,&梁骏吾.(2001).Si(001)衬底上APCVD生长3C-SiC薄膜的微孪晶及含量.中国科学. A辑,数学,31(3),242.
MLA 郑新和,et al."Si(001)衬底上APCVD生长3C-SiC薄膜的微孪晶及含量".中国科学. A辑,数学 31.3(2001):242.
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