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GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积
贺洪波; 范正修; 姚振钰; 汤兆胜
2000
Source Publication中国科学. E辑,技术科学
Volume30Issue:2Pages:127
Abstract采用常规磁控溅射方法,通过优化工艺,在Si(100),Si(111)多种基片上沉积ZnO薄膜。利用透射电镜(TEM)、X射线衍射(XRD)和X射线摇摆曲线(XRC),对ZnO薄膜的微区形貌、结晶情况、C轴择优取向进行了详细的测试分析。结果表明,所制备的ZnO薄膜具有理想的结构特性,大多数样品测得ZnO(002)晶面XRC的半高宽(FWHM)1°左右,最小值达0.353°,优于目前国内外同类研究的最佳结果2°。并对ZnO/Si(100)与ZnO/Si(111)衬底的结果进行了比较和讨论。
metadata_83中科院上海光学精密机械所;中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:655419
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18325
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
贺洪波,范正修,姚振钰,等. GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积[J]. 中国科学. E辑,技术科学,2000,30(2):127.
APA 贺洪波,范正修,姚振钰,&汤兆胜.(2000).GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积.中国科学. E辑,技术科学,30(2),127.
MLA 贺洪波,et al."GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积".中国科学. E辑,技术科学 30.2(2000):127.
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