SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
立方相GaN/GaAs(001)外延层中六角相的分布特征
渠波; 郑新和; 王玉田; 韩景仪; 徐大鹏; 林世鸣; 杨辉; 梁骏吾
2001
Source Publication中国科学. E辑,技术科学
Volume31Issue:3Pages:217
metadata_83中科院半导体所;地质矿产部矿床地质所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:655498
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18323
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
渠波,郑新和,王玉田,等. 立方相GaN/GaAs(001)外延层中六角相的分布特征[J]. 中国科学. E辑,技术科学,2001,31(3):217.
APA 渠波.,郑新和.,王玉田.,韩景仪.,徐大鹏.,...&梁骏吾.(2001).立方相GaN/GaAs(001)外延层中六角相的分布特征.中国科学. E辑,技术科学,31(3),217.
MLA 渠波,et al."立方相GaN/GaAs(001)外延层中六角相的分布特征".中国科学. E辑,技术科学 31.3(2001):217.
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