SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/GaAs/AlGaAs应变量子阱激光器
徐遵图; 徐俊英; 杨国文; 张敬明; 陈昌华; 陈良惠; 沈光地
1999
Source Publication中国激光
Volume26Issue:5Pages:390
Abstract优化设计了既能实现较小垂直方向远场发散角,又能降低腔面光功率密度的InGaAs/GaAs/AlGaAs应变层量子阱激光器,并计算了该结构激光器实现基横模工作的脊形波导结构参数。利用分子束外延生长了InGaAs/GaAs/AlGaAs应变量子阱激光器材料并研制出基横模输出功率大于140mW,激射波长为980nm的脊形波导应变量子阱激光器,其微分量子效率为0.8W/A,垂直和平行结平面方向远场发散角分别为28°和6.8°。
metadata_83中科院半导体所国家光电子工艺中心;北京工业大学
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:660282
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18315
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐遵图,徐俊英,杨国文,等. InGaAs/GaAs/AlGaAs应变量子阱激光器[J]. 中国激光,1999,26(5):390.
APA 徐遵图.,徐俊英.,杨国文.,张敬明.,陈昌华.,...&沈光地.(1999).InGaAs/GaAs/AlGaAs应变量子阱激光器.中国激光,26(5),390.
MLA 徐遵图,et al."InGaAs/GaAs/AlGaAs应变量子阱激光器".中国激光 26.5(1999):390.
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