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CeO_2/Si薄膜PL谱的“紫移”
柴春林; 杨少延; 刘志凯; 廖梅勇; 陈诺夫; 王占国
2001
Source Publication科学通报
Volume46Issue:18Pages:1511
Abstract利用双离子束外延技术制备了CeO_2/Si薄膜,椭圆偏振仪测得薄膜厚度为100nm,折射系数约为2.455。实验中发现未经退火处理的CeO_2室温光致发光(PL)谱存在着“紫移”现象,其移动距离约为65nm。利用XRD和XPS对薄膜结构及价态进行分析后表明,PL谱的移动与氧化物中Ce离子价态有关。当Ce离子价态发生Ce~(4+)→Ce~(3+)变化时,其PL谱峰位要从蓝光区向紫光区移动,出现发光峰“紫峰”现象。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家973计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:691822
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18293
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
柴春林,杨少延,刘志凯,等. CeO_2/Si薄膜PL谱的“紫移”[J]. 科学通报,2001,46(18):1511.
APA 柴春林,杨少延,刘志凯,廖梅勇,陈诺夫,&王占国.(2001).CeO_2/Si薄膜PL谱的“紫移”.科学通报,46(18),1511.
MLA 柴春林,et al."CeO_2/Si薄膜PL谱的“紫移”".科学通报 46.18(2001):1511.
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