Knowledge Management System Of Institute of Semiconductors,CAS
SiC器件工艺的发展状况 | |
王姝睿; 刘忠立 | |
2000 | |
Source Publication | 微电子学
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Volume | 30Issue:6Pages:422 |
metadata_83 | 中科院半导体所 |
Subject Area | 微电子学 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:707321 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18289 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 王姝睿,刘忠立. SiC器件工艺的发展状况[J]. 微电子学,2000,30(6):422. |
APA | 王姝睿,&刘忠立.(2000).SiC器件工艺的发展状况.微电子学,30(6),422. |
MLA | 王姝睿,et al."SiC器件工艺的发展状况".微电子学 30.6(2000):422. |
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5192.pdf(275KB) | 限制开放 | -- | Application Full Text |
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