Knowledge Management System Of Institute of Semiconductors,CAS
| SiC器件工艺的发展状况 | |
| 王姝睿; 刘忠立 | |
| 2000 | |
| Source Publication | 微电子学
 |
| Volume | 30Issue:6Pages:422 |
| metadata_83 | 中科院半导体所 |
| Subject Area | 微电子学 |
| Indexed By | CSCD |
| Language | 中文 |
| CSCD ID | CSCD:707321 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/18289 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | 王姝睿,刘忠立. SiC器件工艺的发展状况[J]. 微电子学,2000,30(6):422. |
| APA | 王姝睿,&刘忠立.(2000).SiC器件工艺的发展状况.微电子学,30(6),422. |
| MLA | 王姝睿,et al."SiC器件工艺的发展状况".微电子学 30.6(2000):422. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 5192.pdf（275KB） | 限制开放 | -- | Application Full Text | |||
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