SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SiC器件工艺的发展状况
王姝睿; 刘忠立
2000
Source Publication微电子学
Volume30Issue:6Pages:422
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:707321
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18289
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王姝睿,刘忠立. SiC器件工艺的发展状况[J]. 微电子学,2000,30(6):422.
APA 王姝睿,&刘忠立.(2000).SiC器件工艺的发展状况.微电子学,30(6),422.
MLA 王姝睿,et al."SiC器件工艺的发展状况".微电子学 30.6(2000):422.
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