SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs(311)A衬底上自组装InAs量子点的结构和光学特性
姜卫红; 许怀哲; 龚谦; 徐波; 王吉政; 周伟; 梁基本; 王占国
1999
Source Publication物理学报
Volume48Issue:8Pages:1541
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:782239
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18265
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
姜卫红,许怀哲,龚谦,等. GaAs(311)A衬底上自组装InAs量子点的结构和光学特性[J]. 物理学报,1999,48(8):1541.
APA 姜卫红.,许怀哲.,龚谦.,徐波.,王吉政.,...&王占国.(1999).GaAs(311)A衬底上自组装InAs量子点的结构和光学特性.物理学报,48(8),1541.
MLA 姜卫红,et al."GaAs(311)A衬底上自组装InAs量子点的结构和光学特性".物理学报 48.8(1999):1541.
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