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不同组分In_xGa_(1-x)As(0≤x≤0.3)覆盖层对自组织InAs量子点的影响
王晓东; 刘会?; 牛智川; 封松林
2000
Source Publication物理学报
Volume49Issue:11Pages:2230
Abstract研究了不同In组分的In_xGa_(1-x)As(0≤x≤0.3)覆盖层对自组织InAs量子点的结构及发光特性的影响。透射电子显微镜和原子力显微表明,InAs量子点在InGaAs做盖层时所受应力较GaAs盖层时有所减小,并且x=0.3时,InGaAs在InAs量子点上继续成岛。随x值的增大,量子点的光荧光峰红移,但随温度的变化发光峰峰位变化不明显。理论分析表明InAs量子点所受应力及其均匀性的变化分别是导致上述现象的主要原因。
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家攀登计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:782786
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18249
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓东,刘会?,牛智川,等. 不同组分In_xGa_(1-x)As(0≤x≤0.3)覆盖层对自组织InAs量子点的影响[J]. 物理学报,2000,49(11):2230.
APA 王晓东,刘会?,牛智川,&封松林.(2000).不同组分In_xGa_(1-x)As(0≤x≤0.3)覆盖层对自组织InAs量子点的影响.物理学报,49(11),2230.
MLA 王晓东,et al."不同组分In_xGa_(1-x)As(0≤x≤0.3)覆盖层对自组织InAs量子点的影响".物理学报 49.11(2000):2230.
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