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共溅射和离子注入制备的SiO_2(Eu)薄膜中Eu~(3+)到Eu~(2+)的转变
刘丰珍; 朱美芳; 刘涛; 李秉程
2001
Source Publication物理学报
Volume50Issue:3Pages:532
Abstract采用共溅射方法和Eu离子注入热生长的SiO_2方法得到SiO_2(Eu)薄膜,Eu离子的浓度为4%和0.5%。对样品X射线吸收近边结构(XANES)的研究和分析表明,在高温氮气中发生了Eu~(3+)向Eu~(2+)的转变。SiO_2(Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论。
metadata_83中国科学技术大学研究生院物理系;中科院高能物理所;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:782937
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18241
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘丰珍,朱美芳,刘涛,等. 共溅射和离子注入制备的SiO_2(Eu)薄膜中Eu~(3+)到Eu~(2+)的转变[J]. 物理学报,2001,50(3):532.
APA 刘丰珍,朱美芳,刘涛,&李秉程.(2001).共溅射和离子注入制备的SiO_2(Eu)薄膜中Eu~(3+)到Eu~(2+)的转变.物理学报,50(3),532.
MLA 刘丰珍,et al."共溅射和离子注入制备的SiO_2(Eu)薄膜中Eu~(3+)到Eu~(2+)的转变".物理学报 50.3(2001):532.
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