SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
a-Si∶O∶H薄膜微结构及其高温退火行为研究
王永谦; 陈长勇; 陈维德; 杨富华; 刁宏伟; 许振嘉; 张世斌; 孔光临; 廖显伯
2001
Source Publication物理学报
Volume50Issue:12Pages:2418
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家973计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:783289
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18233
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王永谦,陈长勇,陈维德,等. a-Si∶O∶H薄膜微结构及其高温退火行为研究[J]. 物理学报,2001,50(12):2418.
APA 王永谦.,陈长勇.,陈维德.,杨富华.,刁宏伟.,...&廖显伯.(2001).a-Si∶O∶H薄膜微结构及其高温退火行为研究.物理学报,50(12),2418.
MLA 王永谦,et al."a-Si∶O∶H薄膜微结构及其高温退火行为研究".物理学报 50.12(2001):2418.
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