SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
我国半导体物理研究进展
夏建白; 黄昆
1999
Source Publication物理
Volume28Issue:9Pages:525
Abstract简单地回顾了近年来我国半导体物理研究的进展。它包括三个方面
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家攀登计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:783482
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18229
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
夏建白,黄昆. 我国半导体物理研究进展[J]. 物理,1999,28(9):525.
APA 夏建白,&黄昆.(1999).我国半导体物理研究进展.物理,28(9),525.
MLA 夏建白,et al."我国半导体物理研究进展".物理 28.9(1999):525.
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