SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SiC材料及器件研制的进展
李晋闽
2000
Source Publication物理
Volume29Issue:8Pages:481
Abstract作为第三代的半导体材料—SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点,在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。文章综述了半导体SiC材料生长及其器件研制的概况。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:783614
Date Available2010-11-23
Citation statistics
Cited Times:9[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18223
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李晋闽. SiC材料及器件研制的进展[J]. 物理,2000,29(8):481.
APA 李晋闽.(2000).SiC材料及器件研制的进展.物理,29(8),481.
MLA 李晋闽."SiC材料及器件研制的进展".物理 29.8(2000):481.
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