SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
原位合成AlN及添加钇的复合AlN粉体
郑新和; 王群; 林志浪; 周美玲
2001
Source Publication中国稀土学报
Volume19Issue:5Pages:430
Abstract以Al-Mg和Al-Mg-Y合金为原料,通入高纯度的氮气,利用原位合成法制备了AlN粉体及含烧结助剂的复合AIN粉体。合金氮化产物的组织排列疏松,有利于粉化。粉化后的AlN粉体纯度较高,含氧量为1.23%,平均粒径为6.78μm, 物相为单相AIN;复合AIN粉体物相组成为AIN主相与稀土钇的氧化物烧结助剂Y2O3相。粒径分布曲线呈双峰现象,从提高粉体的充填系数角度考虑,具有这种粒径分布的粉体有利于烧结致密化。
metadata_83中科院半导体所;北京工业大学材料科学与工程学院
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:803338
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18197
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑新和,王群,林志浪,等. 原位合成AlN及添加钇的复合AlN粉体[J]. 中国稀土学报,2001,19(5):430.
APA 郑新和,王群,林志浪,&周美玲.(2001).原位合成AlN及添加钇的复合AlN粉体.中国稀土学报,19(5),430.
MLA 郑新和,et al."原位合成AlN及添加钇的复合AlN粉体".中国稀土学报 19.5(2001):430.
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