MOVPE生长的GaN基蓝色与绿色LED

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	MOVPE生长的GaN基蓝色与绿色LED
	陆大成; 刘祥林; 韩培德; 王晓晖; 汪度; 袁海荣
	2001
Source Publication	液晶与显示
Volume	16 Issue:1 Pages:1
Abstract	报道用自行研制的LP-MOVPE设备,在蓝宝石(α-Al_2O_3)衬底上生长出以InGaN为有源区的蓝光和绿光InGaN/AlGaN双异质结构以及InGaN/GaN量子阱结构的LED,其发射波长分别为430～450nm和520～540nm。
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家863计划
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:818327
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18191
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	陆大成,刘祥林,韩培德,等. MOVPE生长的GaN基蓝色与绿色LED[J]. 液晶与显示,2001,16(1):1.
APA	陆大成,刘祥林,韩培德,王晓晖,汪度,&袁海荣.(2001).MOVPE生长的GaN基蓝色与绿色LED.液晶与显示,16(1),1.
MLA	陆大成,et al."MOVPE生长的GaN基蓝色与绿色LED".液晶与显示 16.1(2001):1.

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