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MOVPE生长的GaN基蓝色与绿色LED | |
陆大成; 刘祥林; 韩培德![]() | |
2001 | |
Source Publication | 液晶与显示
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Volume | 16Issue:1Pages:1 |
Abstract | 报道用自行研制的LP-MOVPE设备,在蓝宝石(α-Al_2O_3)衬底上生长出以InGaN为有源区的蓝光和绿光InGaN/AlGaN双异质结构以及InGaN/GaN量子阱结构的LED,其发射波长分别为430~450nm和520~540nm。 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家863计划 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:818327 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18191 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 陆大成,刘祥林,韩培德,等. MOVPE生长的GaN基蓝色与绿色LED[J]. 液晶与显示,2001,16(1):1. |
APA | 陆大成,刘祥林,韩培德,王晓晖,汪度,&袁海荣.(2001).MOVPE生长的GaN基蓝色与绿色LED.液晶与显示,16(1),1. |
MLA | 陆大成,et al."MOVPE生长的GaN基蓝色与绿色LED".液晶与显示 16.1(2001):1. |
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5142.pdf(278KB) | 限制开放 | -- | Application Full Text |
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