SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
p~+-n~--n结的势垒分布
赵普琴; 杨锡震; 李桂英; 王亚非
2001
Source Publication液晶与显示
Volume16Issue:1Pages:48
AbstractGaP:N绿色LED发光效率的提高有赖于对其结构参数的优化。根据载流子分布的连续性,由泊松方程自洽求解,得出了半导体n~--n结势垒分布的计算方法。在此基础上,计入n~-区内的电位降,计算了商用发光二极管p~+-n~-n结构的势垒分布,为整体结构的参数优化准备了必要的条件。
metadata_83北京师范大学分析测试中心;中科院半导体所
Subject Area半导体材料
Funding Organization科技部预研项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:818336
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18189
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
赵普琴,杨锡震,李桂英,等. p~+-n~--n结的势垒分布[J]. 液晶与显示,2001,16(1):48.
APA 赵普琴,杨锡震,李桂英,&王亚非.(2001).p~+-n~--n结的势垒分布.液晶与显示,16(1),48.
MLA 赵普琴,et al."p~+-n~--n结的势垒分布".液晶与显示 16.1(2001):48.
Files in This Item:
File Name/Size DocType Version Access License
5141.pdf(255KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[赵普琴]'s Articles
[杨锡震]'s Articles
[李桂英]'s Articles
Baidu academic
Similar articles in Baidu academic
[赵普琴]'s Articles
[杨锡震]'s Articles
[李桂英]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[赵普琴]'s Articles
[杨锡震]'s Articles
[李桂英]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.