SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
反应蒸发制备nmSi-SiO_x发光薄膜
张仕国; 樊瑞新; 邓晓清; 袁骏; 陈伟
1999
Source Publication真空科学与技术学报
Volume19Issue:5Pages:13
metadata_83浙江大学;中科院半导体所
Subject Area半导体材料
Funding Organization教育部博士点基金,国家自然科学基金,浙江省自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:904793
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18177
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张仕国,樊瑞新,邓晓清,等. 反应蒸发制备nmSi-SiO_x发光薄膜[J]. 真空科学与技术学报,1999,19(5):13.
APA 张仕国,樊瑞新,邓晓清,袁骏,&陈伟.(1999).反应蒸发制备nmSi-SiO_x发光薄膜.真空科学与技术学报,19(5),13.
MLA 张仕国,et al."反应蒸发制备nmSi-SiO_x发光薄膜".真空科学与技术学报 19.5(1999):13.
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