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a-SiN_x∶H薄膜退火前后微结构的Raman谱研究
岳瑞峰; 王燕; 韩和相; 廖显伯
2000
Source Publication真空科学与技术学报
Volume20Issue:4Pages:238
metadata_83清华大学微电子学研究所;中科院半导体所
Subject Area半导体材料
Funding Organization国家青年科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:904887
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18175
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
岳瑞峰,王燕,韩和相,等. a-SiN_x∶H薄膜退火前后微结构的Raman谱研究[J]. 真空科学与技术学报,2000,20(4):238.
APA 岳瑞峰,王燕,韩和相,&廖显伯.(2000).a-SiN_x∶H薄膜退火前后微结构的Raman谱研究.真空科学与技术学报,20(4),238.
MLA 岳瑞峰,et al."a-SiN_x∶H薄膜退火前后微结构的Raman谱研究".真空科学与技术学报 20.4(2000):238.
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