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非晶氮化硅薄膜退火前后微结构的XPS研究
岳瑞峰; 王燕; 廖显伯; 王永谦; 刁宏伟; 孔光临
2000
Source Publication真空科学与技术学报
Volume20Issue:6Pages:425
metadata_83清华大学微电子学研究所;中科院半导体所
Subject Area半导体材料
Funding Organization国家青年科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:904935
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18171
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
岳瑞峰,王燕,廖显伯,等. 非晶氮化硅薄膜退火前后微结构的XPS研究[J]. 真空科学与技术学报,2000,20(6):425.
APA 岳瑞峰,王燕,廖显伯,王永谦,刁宏伟,&孔光临.(2000).非晶氮化硅薄膜退火前后微结构的XPS研究.真空科学与技术学报,20(6),425.
MLA 岳瑞峰,et al."非晶氮化硅薄膜退火前后微结构的XPS研究".真空科学与技术学报 20.6(2000):425.
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