SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaP∶NLPE片的纵向载流子浓度分布
李桂英; 刘荣寰; 杨锡震; 王亚非; 桑丽华
1999
Source Publication稀有金属
Volume23Issue:6Pages:72
metadata_83北京师范大学分析测试中心;中科院半导体所;北京师范大学物理系
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:923758
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18163
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李桂英,刘荣寰,杨锡震,等. GaP∶NLPE片的纵向载流子浓度分布[J]. 稀有金属,1999,23(6):72.
APA 李桂英,刘荣寰,杨锡震,王亚非,&桑丽华.(1999).GaP∶NLPE片的纵向载流子浓度分布.稀有金属,23(6),72.
MLA 李桂英,et al."GaP∶NLPE片的纵向载流子浓度分布".稀有金属 23.6(1999):72.
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