SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
质量分离的双离子束沉积法生长CeO_2(111)/Si薄膜
柴春林; 杨少延; 刘志凯; 廖梅勇; 陈诺夫; 王占国
2001
Source Publication稀有金属
Volume25Issue:6Pages:401
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家973计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:923964
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18159
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
柴春林,杨少延,刘志凯,等. 质量分离的双离子束沉积法生长CeO_2(111)/Si薄膜[J]. 稀有金属,2001,25(6):401.
APA 柴春林,杨少延,刘志凯,廖梅勇,陈诺夫,&王占国.(2001).质量分离的双离子束沉积法生长CeO_2(111)/Si薄膜.稀有金属,25(6),401.
MLA 柴春林,et al."质量分离的双离子束沉积法生长CeO_2(111)/Si薄膜".稀有金属 25.6(2001):401.
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