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热处理对非掺杂半绝缘GaAs本征缺陷和电特性的影响
杨瑞霞; 张富强; 陈诺夫
2001
Source Publication稀有金属
Volume25Issue:6Pages:427
metadata_83河北工业大学电信学院;中科院半导体所
Subject Area半导体材料
Funding Organization河北省自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:923970
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18157
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨瑞霞,张富强,陈诺夫. 热处理对非掺杂半绝缘GaAs本征缺陷和电特性的影响[J]. 稀有金属,2001,25(6):427.
APA 杨瑞霞,张富强,&陈诺夫.(2001).热处理对非掺杂半绝缘GaAs本征缺陷和电特性的影响.稀有金属,25(6),427.
MLA 杨瑞霞,et al."热处理对非掺杂半绝缘GaAs本征缺陷和电特性的影响".稀有金属 25.6(2001):427.
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