SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP
Zhao Youwen; Sun Niefeng; S. Fung; C. D. Beling; Sun Tongnian; Lin Lanying
2002
Source Publication半导体学报
Volume23Issue:5Pages:455-458
AbstractThe free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe~(2+) concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP.
metadata_83institute of semiconductors, the chinese academy of sciences;hebei semiconductor research institute;department of physics, the university of hong kong
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:954400
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18145
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhao Youwen,Sun Niefeng,S. Fung,et al. Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP[J]. 半导体学报,2002,23(5):455-458.
APA Zhao Youwen,Sun Niefeng,S. Fung,C. D. Beling,Sun Tongnian,&Lin Lanying.(2002).Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP.半导体学报,23(5),455-458.
MLA Zhao Youwen,et al."Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP".半导体学报 23.5(2002):455-458.
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