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Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP | |
Zhao Youwen; Sun Niefeng; S. Fung; C. D. Beling; Sun Tongnian; Lin Lanying | |
2002 | |
Source Publication | 半导体学报
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Volume | 23Issue:5Pages:455-458 |
Abstract | The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe~(2+) concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP. |
metadata_83 | institute of semiconductors, the chinese academy of sciences;hebei semiconductor research institute;department of physics, the university of hong kong |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:954400 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18145 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Zhao Youwen,Sun Niefeng,S. Fung,et al. Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP[J]. 半导体学报,2002,23(5):455-458. |
APA | Zhao Youwen,Sun Niefeng,S. Fung,C. D. Beling,Sun Tongnian,&Lin Lanying.(2002).Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP.半导体学报,23(5),455-458. |
MLA | Zhao Youwen,et al."Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP".半导体学报 23.5(2002):455-458. |
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