SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Electrical Transport Properties of Annealed Undoped InP
Zhao Youwen; Luo Yilin; Sun Niefeng; S Fung; Beling C D; Sun Tongnian; Lin Lanyin
2002
Source Publication半导体学报
Volume23Issue:1Pages:1-5
AbstractThe electrical properties of annealed undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage (I-V) measurements for semiconducting and semi-insulating samples, receptively. Defect band conduction in annealed semiconducting InP can be observed from TDH measurement, which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation. The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown. Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current.
metadata_83institute of semiconductors, the chinese academy of sciences;department of physics, shantou university;hebei semiconductor research institute;department of physics, the university of hong kong
Subject Area半导体材料
Funding Organization中国科学院半导体研究所材料中心科研发展基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:954409
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18143
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhao Youwen,Luo Yilin,Sun Niefeng,et al. Electrical Transport Properties of Annealed Undoped InP[J]. 半导体学报,2002,23(1):1-5.
APA Zhao Youwen.,Luo Yilin.,Sun Niefeng.,S Fung.,Beling C D.,...&Lin Lanyin.(2002).Electrical Transport Properties of Annealed Undoped InP.半导体学报,23(1),1-5.
MLA Zhao Youwen,et al."Electrical Transport Properties of Annealed Undoped InP".半导体学报 23.1(2002):1-5.
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