SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor
Wei Xin; Ma Xiaoyu; Wang Guohong; Zhang Guangze; Zhu Xiaopeng; Chen Lianghui
2002
Source Publication半导体学报
Volume23Issue:6Pages:565-570
AbstractGaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor. High-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) are combined in determining the nitrogen contents in the samples. Room temperature photoluminescence (RTPL) measurement is also used in characterizing. The influence of different Ga precursors on GaNAs quality is investigated. Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa). Nitrogen content of 5.688% is achieved with TEGa. The peak wavelength in RTPL measurement is measured to be 1278.5nm.
metadata_83institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:954419
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18139
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wei Xin,Ma Xiaoyu,Wang Guohong,et al. Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor[J]. 半导体学报,2002,23(6):565-570.
APA Wei Xin,Ma Xiaoyu,Wang Guohong,Zhang Guangze,Zhu Xiaopeng,&Chen Lianghui.(2002).Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor.半导体学报,23(6),565-570.
MLA Wei Xin,et al."Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor".半导体学报 23.6(2002):565-570.
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