SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Growth of Cubic GaN by MOCVD at High Temperature
Fu Yi; Sun Yuanping; Shen Xiaoming; Li Shunfeng; Feng Zhihong; Duan Lihong; Wang Hai; Yang Hui
2002
Source Publication半导体学报
Volume23Issue:2Pages:120-123
AbstractHigh quality cubic GaN (c-GaN) is grown by metalorganic vapor deposition (MOCVD) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h. The full width at half maximum (FWHM) of room temperature photoluminescence (PL) for the high temperature grown GaN film is 48meV. It is smaller than that of the sample grown at 830 ℃. In X-ray diffraction (XRD) measurement, the high temperature grown GaN shows a (002) peak at 20° with a FWHM of 21'. It can be concluded that, although c-GaN is of metastable phase, high growth temperature is still beneficial to the improvement in its crystal quality. The relationship between the growth rate and growth temperature is also discussed.
metadata_83institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:954425
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18137
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Fu Yi,Sun Yuanping,Shen Xiaoming,et al. Growth of Cubic GaN by MOCVD at High Temperature[J]. 半导体学报,2002,23(2):120-123.
APA Fu Yi.,Sun Yuanping.,Shen Xiaoming.,Li Shunfeng.,Feng Zhihong.,...&Yang Hui.(2002).Growth of Cubic GaN by MOCVD at High Temperature.半导体学报,23(2),120-123.
MLA Fu Yi,et al."Growth of Cubic GaN by MOCVD at High Temperature".半导体学报 23.2(2002):120-123.
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