SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD
Qiu Weibin; Wang Wei; Dong Jie; Zhang Jingyuan; Zhou Fan
2002
Source Publication半导体学报
Volume23Issue:5Pages:459-463
AbstractThe characteristics of thickness enhancement factor and bandgap wavelength of selectively grown In-GaAsP are investigated. A high thickness enhancement factor of 2.9 is obtained. Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG. The threshold current is as low as 10.8mA. The output power is 10m W at 60mA without coating and the SMSR is 35.8dB. The vertical far field angle (FWHM) is decreased from 34 °to 9 °. The tolerance of 1dBm misalignment is 3.4μm vertically.
metadata_83national research center for optoelectronic technology,institute of semiconductors, the chinese academy of sciences
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:954472
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18131
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Qiu Weibin,Wang Wei,Dong Jie,et al. Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD[J]. 半导体学报,2002,23(5):459-463.
APA Qiu Weibin,Wang Wei,Dong Jie,Zhang Jingyuan,&Zhou Fan.(2002).Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD.半导体学报,23(5),459-463.
MLA Qiu Weibin,et al."Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD".半导体学报 23.5(2002):459-463.
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