SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
铟镓氮薄膜的光电特性
韩培德; 刘祥林; 袁海荣; 陈振; 李昱峰; 陆沅; 汪度; 陆大成; 王占国
2002
Source Publication半导体学报
Volume23Issue:2Pages:143-148
Abstract用金属有机物气相外延设备,在氮化镓/蓝宝石复合衬底上快速外延生长铟镓氮薄膜,并对其进行了X射线三晶衍射、光致发光、反射光谱及霍尔测量等实验测试。确定该薄膜为单晶,其中In组分可以从0增加到0.26;在光致激发下发光光谱为单峰,且峰值波长在360~555nm范围内可调;其发光机理被证实为膜内载流子经带隙跃迁而直接复合;并具有很高的电子浓度。但InGaN薄膜的结晶质量却随着In含量的增加而变差。
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金(No.6 86 1),国家重点基础研究专项经费(No.G2 683)资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:955293
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18121
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
韩培德,刘祥林,袁海荣,等. 铟镓氮薄膜的光电特性[J]. 半导体学报,2002,23(2):143-148.
APA 韩培德.,刘祥林.,袁海荣.,陈振.,李昱峰.,...&王占国.(2002).铟镓氮薄膜的光电特性.半导体学报,23(2),143-148.
MLA 韩培德,et al."铟镓氮薄膜的光电特性".半导体学报 23.2(2002):143-148.
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