SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长
冯志宏; 杨辉; 徐大鹏; 赵德刚; 王海; 段俐宏
2002
Source Publication半导体学报
Volume23Issue:2Pages:161-164
Abstract利用MOCVD生长技术在GaAs(100)衬底上生长了高质量的立方相AlGaN薄膜。通过光致发光(PL)、扫描电镜(SEM)分析了不同NH_3流量、不同生长温度对AlGaN外延层的结晶质量和表面形貌的影响。发现相对高的NH_3流量和相对高的生长温度可以提高AlGaN外延层的结晶质量。
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:955321
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18119
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
冯志宏,杨辉,徐大鹏,等. 立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长[J]. 半导体学报,2002,23(2):161-164.
APA 冯志宏,杨辉,徐大鹏,赵德刚,王海,&段俐宏.(2002).立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长.半导体学报,23(2),161-164.
MLA 冯志宏,et al."立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长".半导体学报 23.2(2002):161-164.
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