SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高线性度外延及注入GaAs Hall器件
郑一阳
2002
Source Publication半导体学报
Volume23Issue:5Pages:505-508
Abstract讨论了外延及注入制作的薄层GaAs Hall器件如何获得高的磁线性度。GaAs Hall器件的磁线性度在高磁场下会有偏离,但可以通过外延及注入的过渡层对有源区进行补偿,在合适的有源区和过渡区的浓度和厚度分布中,可以得到在2.5T的强磁场下,±0.04%的高磁线性度。
metadata_83中国科学院半导体研究所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:955352
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18113
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑一阳. 高线性度外延及注入GaAs Hall器件[J]. 半导体学报,2002,23(5):505-508.
APA 郑一阳.(2002).高线性度外延及注入GaAs Hall器件.半导体学报,23(5),505-508.
MLA 郑一阳."高线性度外延及注入GaAs Hall器件".半导体学报 23.5(2002):505-508.
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