SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
快速响应SOI马赫曾德热光调制器
魏红振; 余金中; 夏金松; 严清峰; 刘忠立; 房昌水
2002
Source Publication半导体学报
Volume23Issue:5Pages:509-512
Abstract给出了Y分支MZI热光调制器的模型,实验研制了基于SOI(silicon-on-insulator)的MZI热光调制器,调制器的消光比为16.5dB,开关的上升时间为10μs,下降时间为20μs,相应的功耗为0.39W
metadata_83中国科学院半导体研究所;山东大学人工晶体研究所
Subject Area微电子学
Funding Organization国家自然科学基金(批准号
Indexed ByCSCD
Language中文
CSCD IDCSCD:955376
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18107
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
魏红振,余金中,夏金松,等. 快速响应SOI马赫曾德热光调制器[J]. 半导体学报,2002,23(5):509-512.
APA 魏红振,余金中,夏金松,严清峰,刘忠立,&房昌水.(2002).快速响应SOI马赫曾德热光调制器.半导体学报,23(5),509-512.
MLA 魏红振,et al."快速响应SOI马赫曾德热光调制器".半导体学报 23.5(2002):509-512.
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