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选择外延MOVPE的表面迁移
邱伟彬; 董杰; 周帆; 王圩
2002
Source Publication半导体光电
Volume23Issue:3Pages:212-214
Abstract研究了采用选择外延MOVPE生长InGaAsP的组分随掩模宽度的变化规律,以及InGaAsP表面边缘尖角随V/III比的变化。结果表明,随着掩模宽度的增大,In组分增大,Ga组分减少;随着V/III比的增大,InGaAsP材料表面趋向平坦。对材料边缘尖角的变化规律作出了合理解释,研制出表面平坦的外延材料,为器件研制提供了有效的方法。
metadata_83中国科学院半导体研究所国家光电子工艺中心
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:955400
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18101
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邱伟彬,董杰,周帆,等. 选择外延MOVPE的表面迁移[J]. 半导体光电,2002,23(3):212-214.
APA 邱伟彬,董杰,周帆,&王圩.(2002).选择外延MOVPE的表面迁移.半导体光电,23(3),212-214.
MLA 邱伟彬,et al."选择外延MOVPE的表面迁移".半导体光电 23.3(2002):212-214.
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