SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Tunnel Junction AlGaInP Light Emitting Diode
Wang Guohong; Shen Guangdi; Guo Xia; Gao Guo; Wei Xin; Zhang Guangze; Ma Xiaoyu; Li Yuzhang; Chen Lianghui
2002
Source Publication半导体学报
Volume23Issue:6Pages:628-631
AbstractThe n-type GaAs substrates are used and their conductive type is changed to p-type by tunnel junction for AlGaInP light emitting diodes (TJ-LED), then n-type GaP layer is used as current spreading layer. Because resistivity of the n-type GaP is lower than that of p-type, the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type GaP current spreading layer. For TJ-LED with 3μm n-type GaP current spreading layer, experimental results show that compared with conventional LED with p-type GaP current spreading layer, light output power is increased for 50% at 20mA and for 66.7% at 100mA.
metadata_83institute of information, beijing polytechnic university;institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:955405
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18099
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Guohong,Shen Guangdi,Guo Xia,et al. Tunnel Junction AlGaInP Light Emitting Diode[J]. 半导体学报,2002,23(6):628-631.
APA Wang Guohong.,Shen Guangdi.,Guo Xia.,Gao Guo.,Wei Xin.,...&Chen Lianghui.(2002).Tunnel Junction AlGaInP Light Emitting Diode.半导体学报,23(6),628-631.
MLA Wang Guohong,et al."Tunnel Junction AlGaInP Light Emitting Diode".半导体学报 23.6(2002):628-631.
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