SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Preparation of Semi-Insulating Material by Annealing Undoped InP
Zhao Youwen; Dong Hongwei; Jiao Jinghua; Zhao Jianqun; Lin Lanying; Sun Niefeng; Sun Tongnian
2002
Source Publication半导体学报
Volume23Issue:3Pages:285-289
AbstractSemi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930 ℃ for 80h. The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP). The IP-SI InP wafers have good electrical parameters and uniformity of whole wafer. However, PP-SI InP wafers exhibit poor uniformity and electrical parameters, Photoluminescence which is subtle to deep defect appears in IP-annealed semi-insulating InP. Traps in annealed SI InP are detected by the spectroscopy of photo-induced current transient. The results indicate that there are fewer traps in IP-annealed undoped SI InP than those in as-grown Fe-doped and PP-undoped SI-undoped SI InP. The formation mechanism of deep defects in annealed undoped InP is discussed.
metadata_83institute of semiconductors the chinese academy of sciences,materials science center & materials science laboratory;hebei semiconductor research institute
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:955656
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18091
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhao Youwen,Dong Hongwei,Jiao Jinghua,et al. Preparation of Semi-Insulating Material by Annealing Undoped InP[J]. 半导体学报,2002,23(3):285-289.
APA Zhao Youwen.,Dong Hongwei.,Jiao Jinghua.,Zhao Jianqun.,Lin Lanying.,...&Sun Tongnian.(2002).Preparation of Semi-Insulating Material by Annealing Undoped InP.半导体学报,23(3),285-289.
MLA Zhao Youwen,et al."Preparation of Semi-Insulating Material by Annealing Undoped InP".半导体学报 23.3(2002):285-289.
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