SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE
Qiu Weibin; Dong Jie; Wang Wei; Zhou Fan
2002
Source Publication半导体学报
Volume23Issue:7Pages:681-684
AbstractHigh performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self-aligned selective area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide are regrown simultaneously, which not only offeres the separated optimization of the active region and the integrated spotsize converter, but also reduces the difficulty of the butt-joint selective regrowth. The threshold current is as low as 4.4mA. The output power at 49mA is 10.1mW. The side mode suppression ratio (SMSR) is 33.2dB. The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively, the 1dB misalignment tolerance are 3.6μm and 3.4μm.
metadata_83national research center for optolectronic technology,institute of semiconductors, the chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:976750
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18079
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Qiu Weibin,Dong Jie,Wang Wei,et al. 1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE[J]. 半导体学报,2002,23(7):681-684.
APA Qiu Weibin,Dong Jie,Wang Wei,&Zhou Fan.(2002).1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE.半导体学报,23(7),681-684.
MLA Qiu Weibin,et al."1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE".半导体学报 23.7(2002):681-684.
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