SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE
Shen Xiaoming; Feng Zhihong; Feng Gan; Fu Yi; Zhang Baoshun; Sun Yuanping; Zhang Zehong; Yang Hui
2002
Source Publication半导体学报
Volume23Issue:7Pages:707-712
AbstractWet etching characteristics of cubic GAN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H_3PO_4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90~300 ℃. It is found that different solution produces different etch figure on the surfaces of a sample. KOH-based solutions produce rectangular pits rather than square pits. The etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. In addition, it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c-GaN epilayers.
metadata_83institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:698251 7),NSFC-RGC联合基金(批准号:5 1161953,N-HKU 28/ )
Indexed ByCSCD
Language英语
CSCD IDCSCD:976875
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18075
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Shen Xiaoming,Feng Zhihong,Feng Gan,et al. Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE[J]. 半导体学报,2002,23(7):707-712.
APA Shen Xiaoming.,Feng Zhihong.,Feng Gan.,Fu Yi.,Zhang Baoshun.,...&Yang Hui.(2002).Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE.半导体学报,23(7),707-712.
MLA Shen Xiaoming,et al."Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE".半导体学报 23.7(2002):707-712.
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