SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System
Sun Guosheng; Wang Lei; Luo Muchang; Zhao Wanshun; Sun Dianzhao; Zeng Yiping; Li Jinmin; Lin Lanying
2002
Source Publication半导体学报
Volume23Issue:8Pages:800-804
AbstractSingle crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system, using SiH_4, C_2H_4 and H_2 as gas precursors. X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films. Electrical properties of the epitaxial 3C-SiC layers with thickness of 1 ~ 3μm are measured by Van der Pauw method. The improved Hall mobility reaches the highest value of 470cm~2/(V·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3).
metadata_83novel semiconductor material laboratory, institute of semiconductors, the chinese academy of sciences
Subject Area半导体材料
Funding Organization国家基础研究专项基金(No. G2 683),国家高技术研究与发展基金(No. 2 1AA311 9 )
Indexed ByCSCD
Language英语
CSCD IDCSCD:976892
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18073
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Sun Guosheng,Wang Lei,Luo Muchang,et al. Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System[J]. 半导体学报,2002,23(8):800-804.
APA Sun Guosheng.,Wang Lei.,Luo Muchang.,Zhao Wanshun.,Sun Dianzhao.,...&Lin Lanying.(2002).Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System.半导体学报,23(8),800-804.
MLA Sun Guosheng,et al."Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System".半导体学报 23.8(2002):800-804.
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