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GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现
孙元平; 张泽洪; 赵德刚; 冯志宏; 付羿; 张书明; 杨辉
2002
Source Publication半导体学报
Volume23Issue:9Pages:1001-1005
Abstract利用光学薄膜原理,计算了采用晶片键合技术来提高以GaAs为衬底的立方相GaN的出光效率的理论可行性,以Ni为粘附层,Ag为反射层的Ni/Ag/Au薄膜体系可以使立方GaN的出光效率从理论上提高2.65倍左右。实验结果证实,利用键合方法实现的以Ni/Ag/Au作为反射膜的样品的光反射率比未做键合的GaN/GaAs样品的光反射率的理论计算的459.2nm处提高了2.4倍。
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:698251 7),NSFC-RGC联合基金(批准号:5 1161953, N-H KU 28/ )
Indexed ByCSCD
Language中文
CSCD IDCSCD:979213
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18065
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙元平,张泽洪,赵德刚,等. GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现[J]. 半导体学报,2002,23(9):1001-1005.
APA 孙元平.,张泽洪.,赵德刚.,冯志宏.,付羿.,...&杨辉.(2002).GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现.半导体学报,23(9),1001-1005.
MLA 孙元平,et al."GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现".半导体学报 23.9(2002):1001-1005.
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