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GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较
沈晓明; 张秀兰; 孙元平; 赵德刚; 冯淦; 张宝顺; 张泽洪; 冯志宏; 杨辉
2002
Source Publication半导体学报
Volume23Issue:8Pages:881-885
Abstract研究了用金属有机物气相外延(MOVPE)方法在GaAs(001)衬底上生长的立方相GaN(c-GaN)外延层的光辅助湿法腐蚀特性,并和生长在蓝宝石(0001)衬底上的六方相GaN(h-GaN)外延层的光辅助湿法座蚀特性进行了比较。实验发现c-GaN膜的暗态电流和光电流的变化不同于h-GaN膜的腐蚀电流的变化规律。对引起上述差异的原因进行了简单的讨论。
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:698251 7),NSFC-RGC联合基金(批准号:5 1161953,N-HKU 28/ )
Indexed ByCSCD
Language中文
CSCD IDCSCD:979391
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18063
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
沈晓明,张秀兰,孙元平,等. GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较[J]. 半导体学报,2002,23(8):881-885.
APA 沈晓明.,张秀兰.,孙元平.,赵德刚.,冯淦.,...&杨辉.(2002).GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较.半导体学报,23(8),881-885.
MLA 沈晓明,et al."GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较".半导体学报 23.8(2002):881-885.
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