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(111)Si上外延生长六方GaN的TEM观察
胡桂青; 孔翔; 王乙潜; 万里; 段晓峰; 陆沅; 刘祥林
2002
Source Publication电子显微学报
Volume21Issue:5Pages:699-700
Abstract利用衍衬、SAED、HRTEM对在(111)Si上外延生长的六方GaN进行了观察分析。GaN外延层与缓冲层和基底的取向关系为(0001)_(GaN)∥(0001)_(AlN)∥(111)_(Si),[11(2-bar)0]_(GaN)∥[11(2-bar)0]_(AlN)∥[110]_(Si)。GaN外延层中存在倒反畴。GaN中位错以刃型位错为主。In_(0.1) Ga_(0.9) N/GaN的多重量子阱结构(MQW)具有阻挡穿透位错,降低位错密度的作用。
metadata_83中科院物理所;中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目(no.5 72 44)
Indexed ByCSCD
Language中文
CSCD IDCSCD:981246
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18051
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
胡桂青,孔翔,王乙潜,等. (111)Si上外延生长六方GaN的TEM观察[J]. 电子显微学报,2002,21(5):699-700.
APA 胡桂青.,孔翔.,王乙潜.,万里.,段晓峰.,...&刘祥林.(2002).(111)Si上外延生长六方GaN的TEM观察.电子显微学报,21(5),699-700.
MLA 胡桂青,et al."(111)Si上外延生长六方GaN的TEM观察".电子显微学报 21.5(2002):699-700.
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