SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells
Luo X D; Xu Z Y; Ge W K
2002
Source Publication发光学报
Volume23Issue:2Pages:109-113
AbstractWe have studied exciton localization and delocalization effect in GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) and timeresolved PL measurements. Studied results suggest that, at low temperature and under a conventional CW excitation, measured PL spectra were dominated by localized exciton (LE) emission caused by potential fluctuations in GaNAs layer. However, under short pulse laser excitation, it is different. An extra high-energy PL peak comes out from GaNAs/GaAs QWs and dominates the PL spectra under high excitation and/or at high temperature. By investigation, we have attributed the new PL peak to the recombination of delocalized excitons in QWs. This recombination process competes with the localized exciton emission, which, we believe, constitutes the "S-shaped" temperature-dependent emission shift often reported in ternary nitrides of InGaN and AlGaN in the literature.
metadata_83institute of semiconductors, chinese academy of sciences;department of physics, hong kong university of science and technology
Subject Area半导体物理
Funding Organization国家自然科学基金资助项目(19974 45),中国科学院纳米科学技术项目基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:982803
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18049
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Luo X D,Xu Z Y,Ge W K. Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells[J]. 发光学报,2002,23(2):109-113.
APA Luo X D,Xu Z Y,&Ge W K.(2002).Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells.发光学报,23(2),109-113.
MLA Luo X D,et al."Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells".发光学报 23.2(2002):109-113.
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