SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP
Zhao Youwen; Luo Yilin; Feng Hanyuan; Beling C D; Lin Lanying
2002
Source Publication半导体学报
Volume23Issue:10Pages:1041-1045
AbstractProperties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.
metadata_83institute of semiconductors, the chinese academy of sciences;department of physics, santo university;department of physics, the university of hong kong
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:986144
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18047
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhao Youwen,Luo Yilin,Feng Hanyuan,et al. Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP[J]. 半导体学报,2002,23(10):1041-1045.
APA Zhao Youwen,Luo Yilin,Feng Hanyuan,Beling C D,&Lin Lanying.(2002).Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP.半导体学报,23(10),1041-1045.
MLA Zhao Youwen,et al."Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP".半导体学报 23.10(2002):1041-1045.
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