SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
准连续5kW叠层激光二极管列阵
方高瞻; 肖建伟; 马骁宇; 谭满清; 冯小明; 潘贵生
2002
Source Publication高技术通讯
Volume12Issue:5Pages:41-44
Abstract报导了5kW GaAs/AlGaAs叠层激光二极管列阵的制作过程和测试结果。通过金属有机物化学气相沉积方法实现分别限制单量子阱结构。1cm激光条的填充密度是70%。采用80个激光条叠层封装,激光条间距是0.5mm,功率密度达1.25kW/cm~2,峰值波长是809.0nm,谱线宽度是4.8nm。
metadata_83中国科学院半导体研究所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:993724
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18015
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
方高瞻,肖建伟,马骁宇,等. 准连续5kW叠层激光二极管列阵[J]. 高技术通讯,2002,12(5):41-44.
APA 方高瞻,肖建伟,马骁宇,谭满清,冯小明,&潘贵生.(2002).准连续5kW叠层激光二极管列阵.高技术通讯,12(5),41-44.
MLA 方高瞻,et al."准连续5kW叠层激光二极管列阵".高技术通讯 12.5(2002):41-44.
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