SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors
Liang Kun; Chen Hongda; Du Yun; Tang Jun; Yang Xiaohong; Wu Ronghan
2002
Source Publication半导体学报
Volume23Issue:11Pages:1135-1139
AbstractBoth the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. Their characteristics are analyzed. The light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mW while injection current is 50mA. A 1*16 array of surface emitting light device is tested on line by probes and then used for module. The light detectors have wavelength selectivity and space selectivity. The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.
metadata_83institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:6 137 2 ),国家自然科学基金(批准号:6989626 ),国家自然科学基金(批准号:69776 36),国家863计划(Nos.2 1AA122 32),国家863计划(Nos.2 1AA312 8 )
Indexed ByCSCD
Language英语
CSCD IDCSCD:1007088
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17995
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liang Kun,Chen Hongda,Du Yun,et al. Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors[J]. 半导体学报,2002,23(11):1135-1139.
APA Liang Kun,Chen Hongda,Du Yun,Tang Jun,Yang Xiaohong,&Wu Ronghan.(2002).Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors.半导体学报,23(11),1135-1139.
MLA Liang Kun,et al."Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors".半导体学报 23.11(2002):1135-1139.
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