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InAs自组织量子点(线)的制备和表征
武光明; 李月法; 贾锐
2002
Source Publication材料研究学报
Volume16Issue:5Pages:490-494
Abstract在InP(001)基衬底上用分子束外延方法生长了InAs纳米结构材料,通过改变生长方式,得到了InAs量子点和量子线。根据扫描电镜和透射电镜观测结果的分析,认为衬底旋转时浸润层三角形状的台阶为InAs量子线的成核提供了优先条件,停止衬底旋转时InAlAs缓冲层沿[1(1-bar)0]方向分布的台阶促使InAs优先形成量子点。讨论了量子点和量子线的形成机量。
metadata_83北京石油化工学院;中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目69876 37
Indexed ByCSCD
Language中文
CSCD IDCSCD:1007176
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17993
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
武光明,李月法,贾锐. InAs自组织量子点(线)的制备和表征[J]. 材料研究学报,2002,16(5):490-494.
APA 武光明,李月法,&贾锐.(2002).InAs自组织量子点(线)的制备和表征.材料研究学报,16(5),490-494.
MLA 武光明,et al."InAs自组织量子点(线)的制备和表征".材料研究学报 16.5(2002):490-494.
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