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热退火γ-Al_2O_3/Si异质结构薄膜质量改进
谭利文; 王俊; 王启元; 郁元桓; 刘忠立; 邓惠芳; 王建华; 林兰英
2002
Source Publication半导体学报
Volume23Issue:11Pages:1178-1181
Abstract采用高真空MOCVD外延技术,利用TMA(Al(CH_3)_3)和O_2作为反应源,在Si(100)衬底上外延生长γ-Al_2O_3绝缘膜形成γ-Al_2O_3/Si异质结构材料。同时,引入外延后退火工艺以便改善γ-Al_2O_3薄膜的晶体质量及电学性能。测试结果表明,通过在O_2常压下的退火工艺可以有效地消除γ-Al_2O_3外延层的残余热应力及孪晶缺陷,改善外延层的晶体质量,同时可以提高MOS电容的抗击穿能力,降低漏电电流。
metadata_83中科院半导体所材料科学中心;中国科学院半导体研究所微电子研究中心
Subject Area半导体材料
Funding Organization国家重点基础研究专项经费资助项目(No.G2 365)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1007381
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17991
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
谭利文,王俊,王启元,等. 热退火γ-Al_2O_3/Si异质结构薄膜质量改进[J]. 半导体学报,2002,23(11):1178-1181.
APA 谭利文.,王俊.,王启元.,郁元桓.,刘忠立.,...&林兰英.(2002).热退火γ-Al_2O_3/Si异质结构薄膜质量改进.半导体学报,23(11),1178-1181.
MLA 谭利文,et al."热退火γ-Al_2O_3/Si异质结构薄膜质量改进".半导体学报 23.11(2002):1178-1181.
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